Silicon NPN Transistor Compact SOT23 Package BLUE ROCKET S8050M-C Ideal for Power Amplifier Applications

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Product Description

Product Overview

The S8050M is a high-quality Silicon NPN transistor housed in a compact SOT-23 Plastic Package. Designed as a complementary pair to the S8550M, this transistor is specifically engineered for power amplifier applications. It offers reliable performance with clear hFE classifications for precise application matching.

Product Attributes

Package Type: SOT-23 Plastic Package
Transistor Type: Silicon NPN
Complementary Pair: S8550M
Marking Codes: HY3B, HY3C, HY3D

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	800	mA
Base Current	IB	200	mA
Collector Power Dissipation	PC	450	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0			40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=2.0mA, IB=0			25	V
Emitter to Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=35V, IE=0		0.1	A
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0		0.1	A
DC Current Gain	hFE	VCE=1.0V, IC=100mA	85		300
		VCE=1.0V, IC=500mA		40
		VCE=1.0V, IC=5.0mA		45
Collector-Emitter Saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.28	0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA		0.98	1.2	V
Base-Emitter Voltage	VBE	VCE=1.0V, IC=10mA		0.66	1.0	V
Transition Frequency	fT	VCE=10V, IC=50mA	100		190	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			9.0	pF