Automotive certified NPN transistor BLUE ROCKET BRMJD112Q with TO 252 package and high DC current gain

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Product Description

Product Overview

The BRMJD112Q is a high DC current gain NPN silicon transistor designed for medium power switching applications. It features a TO-252 plastic package, a built-in damper diode between the emitter and collector, and is electrically similar to the BRTIP112Q. Qualified to AEC-Q101 Standards for High Reliability, this product is halogen-free and meets the stringent requirements of automotive applications.

Product Attributes

Brand: FS (implied by URL)
Product Type: NPN Silicon Transistor
Package Type: TO-252 Plastic Package
Certifications: AEC-Q101 Standard for High Reliability
Material/Feature: Halogen-Free Product
Internal Components: Built-in damper diode at E-C
Marking Code: BR (Company Code), Q (Automobile halogen-free product Code), MJD112 (Product Type), **** (Lot No. Code)

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	100	V
Collector to Emitter Voltage	VCEO	100	V
Emitter to Base Voltage	VEBO	5.0	V
Collector Current - Continuous	IC	2.0	A
Collector Current Continuous(Pulse)	IC(Pulse)	4.0	A
Base Current - Continuous	IB	50	mA
Collector Power Dissipation	PC	1.75	W
Collector Power Dissipation (TC=25)	PC(TC=25)	20	W
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Emitter Breakdown Voltage*	VCEO*	IC=10mA IB=0	100			V
Collector Cut-Off Current	ICEO	VCE=50V IB=0		0.02		mA
Collector Cut-Off Current	ICBO	VCB=100V IE=0		0.02		mA
Emitter Cut-Off Current	IEBO	VEB=5.0V IC=0		2.0		mA
DC Current Gain	hFE(1)*	VCE=3.0V IC=2.0A	1000		12K
DC Current Gain	hFE(2)*	VCE=3.0V IC=0.5A	500
DC Current Gain	hFE(3)*	VCE=3.0V IC=4.0A	200
Collector-Emitter Saturation Voltage	VCE(sat)1*	IC=2.0A IB=8.0mA			2.0	V
Collector-Emitter Saturation Voltage	VCE(sat)2*	IC=4.0A IB=40mA			3.0	V
Base-Emitter Saturation Voltage*	VBE(sat)*	IC=4.0A IB=40mA			4.0	V
Base-Emitter-On Voltage*	VBE(on)*	VCE=3.0V IC=2.0A			2.8	V
Current Gain Bandwidth Product	fT	VCE=10V IC=0.75A		25		MHz
Output Capacitance	Cob	VCB=10V IE=0 f=0.1MHz			100	pF