General Purpose Silicon Transistor BLUE ROCKET MMDT5451 NPN and PNP Types in SOT363 Plastic Package

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Product Description

Product Overview

The MMDT5451 is a silicon NPN and PNP transistor housed in a SOT-363 plastic package. It offers high DC current gain (hFE), low collector-to-emitter saturation voltage (VCE(sat)), and is a halogen-free product. This versatile device is designed for general-purpose amplification and switching applications.

Product Attributes

Brand: FsbRec (implied by datasheet URL)
Package Type: SOT-363
Semiconductor Type: NPN + PNP
Material: Silicon
Certifications: Halogen-Free

Technical Specifications

Parameter	Symbol	Rating (NPN)	Rating (PNP)	Unit	Test Conditions (NPN)	Min (NPN)	Typ (NPN)	Max (NPN)	Test Conditions (PNP)	Max (PNP)
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	180	-180	V						V
Collector to Emitter Voltage	VCEO	160	-160	V						V
Emitter to Base Voltage	VEBO	6.0	-6.0	V						V
Collector Current	IC	200	-200	mA						mA
Power Dissipation	PD	200		mW						mW
Thermal Resistance, Junction to Ambient	RJA	625		/W						/W
Junction and Storage Temperature	Tj, Tstg	-55+150
Electrical Characteristics (Ta=25)
Collector Cut-Off Current	ICBO	VCB=180V, IE=0	0.1	A	VCB=-180V, IE=0	-0.1	A
Emitter Cut-off Current	IEBO	VEB=6.0V, IC=0	0.1	A	VEB=-6.0V, IC=0	-0.1	A
DC Current Gain	hFE(1)	VCE=5.0V, IC=10mA	100	200	300	VCE=-5.0V, IC=-10mA	100	200	300
DC Current Gain	hFE(2)	VCE=5.0V, IC=50mA	20	160		VCE=-5.0V, IC=-50mA	20	70
DC Current Gain	hFE(3)	VCE=5.0V, IC=1.0mA	40	190		VCE=-5.0V, IC=-1.0mA	40	180
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=10mA, IB=1.0mA	0.06	0.15	V	IC=-10mA, IB=-1.0mA	-0.12	-0.4	V
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=50mA, IB=5.0mA	0.09	0.3	V	IC=-50mA, IB=-5.0mA	-0.5	-0.8	V
Base-Emitter Saturation Voltage	VBE(sat)(1)	IC=10mA, IB=1.0mA	0.7	1.0	V	IC=-10mA, IB=-1.0mA	-0.75	-1.0	V
Base-Emitter Saturation Voltage	VBE(sat)(2)	IC=50mA, IB=5.0mA	0.8	1.0	V	IC=-50mA, IB=-5.0mA	-0.8	-1.0	V
Base-Emitter Voltage	VBE	VCE=5.0V, IC=10mA	0.68	0.75	V	VCE=-5.0V, IC=-10mA	-0.7	-0.75	V
Transition Frequency	fT	VCE=10V, IC=10mA	50	110	MHz	VCE=-10V, IC=-10mA	50	80	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz	2.2	5.0	pF	VCB=-10V, IE=0, f=10MHz	2.5	5.0	pF
Turn-on Time	ton	IC=100mA, IB1=-IB2=10mA	0.3	s	IC=-100mA, -IB1=IB2=-10mA	0.1	s
Turn-off Time	toff	0.4			s	0.2			s
Storage Time	tstg	0.2			s	0.1			s

Packaging and Handling

Specification	Details
Marking Code	Pin 1 indicated by a dot. Product Type Code: GL. Lot No. Code: ***.
IR Reflow Soldering Profile (Pb-Free)	Preheating: 150-180, 60-90 sec. Peak Temp.: 2455, Duration: 50.5 sec. Cooling Speed: 2-10/sec.
Resistance to Soldering Heat Test	Temp.: 2605, Time: 101 sec.
Packaging (Reel)	SOT-363, 3,000 Units/Reel.