High voltage PNP silicon transistor BLUE ROCKET 2N5401-B TO92 package for amplification and switching

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Product Description

Product Overview

The 2N5401 is a Silicon PNP transistor housed in a TO-92 plastic package. It offers high voltage capabilities and serves as a complementary pair to the 2N5551. This transistor is designed for general-purpose high voltage amplification applications.

Product Attributes

Package Type: TO-92 Plastic Package
Transistor Type: PNP Silicon
Complementary Pair: 2N5551

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-180	V
Collector to Emitter Voltage	VCEO	-160	V
Emitter to Base Voltage	VEBO	-6.0	V
Collector Current - Continuous	IC	-600	mA
Base Current - Continuous	IB	-300	mA
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=-180V, IE=0		-0.1		A
Emitter Cut-Off Current	IEBO	VEB=-6.0V, IC=0		-0.1		A
DC Current Gain	hFE(1)	VCE=-5.0V, IC=-10mA	50		400
DC Current Gain	hFE(2)	VCE=-5.0V, IC=-50mA		20
DC Current Gain	hFE(3)	VCE=-5.0V, IC=-1.0mA	40
Collector to Emitter Saturation Voltage	VCE(sat)(1)	IC=-10mA, IB=-1.0mA		-0.12	-0.4	V
Collector to Emitter Saturation Voltage	VCE(sat)(2)	IC=-50mA, IB=-5.0mA		-0.5	-0.8	V
Base to Emitter Saturation Voltage	VBE(sat)(1)	IC=-10mA, IB=-1.0mA		-0.75	-1.0	V
Base to Emitter Saturation Voltage	VBE(sat)(2)	IC=-50mA, IB=-5.0mA		-0.8	-1.0	V
Base to Emitter Voltage	VBE	VCE=-5.0V, IC=-10mA	-0.7	-0.75		V
Current Gain Bandwidth Product	fT	VCE=-10V, IC=-10mA	50		80	MHz
Output Capacitance	Cob	VCB=-10V, IE=0, f=10MHz		2.5	5.0	pF
Turn On Time	ton	IC=-100mA, IB1=IB2=-10mA		0.1		s
Turn Off Time	toff	IC=-100mA, IB1=IB2=-10mA		0.2		s
Storage Time	tstg	IC=-100mA, IB1=IB2=-10mA		0.1		s