General purpose NPN transistor BLUE ROCKET BRBC847Q with high voltage rating and halogen free design

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Product Description

Product Overview

The BRBC847Q is a high-voltage NPN silicon transistor designed for general-purpose and switching applications. It is complementary to the BRBC857Q and is qualified to AEC-Q101 Standards for High Reliability, making it suitable for stringent automotive applications. This product is halogen-free.

Product Attributes

Brand: fsbrec
Product Type: NPN Silicon Transistor
Package Type: SOT-23 Plastic Package
Certifications: AEC-Q101 Qualified, Halogen-Free
Complementary Pair: BRBC857Q

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	50	V
Collector to Emitter Voltage	VCEO	45	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current - Continuous	IC	100	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=30V, IE=0		0.015		A
DC Current Gain	hFE	VCE=5.0V, IC=2.0mA	110		800
Collector to Emitter Saturation Voltage	VCE(sat)1	IC=10mA, IB=0.5mA		0.09	0.25	V
Collector to Emitter Saturation Voltage	VCE(sat)2	IC=100mA, IB=5.0mA		0.2	0.6	V
Base to Emitter Saturation Voltage	VBE(sat)1	IC=10mA, IB=0.5mA			0.7	V
Base to Emitter Saturation Voltage	VBE(sat)2	IC=100mA, IB=5.0mA			0.9	V
Base to Emitter Voltage	VBE(on)1	VCE=5.0V, IC=2.0mA		0.58	0.7	V
Base to Emitter Voltage	VBE(on)2	VCE=5.0V, IC=10mA		0.75		V
Transition Frequency	fT	VCE=5.0V, IC=10mA, f=100MHz		300		MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz		2.5	4.5	pF
Noise Figure	NF	VCE=6.0V, IC=0.1mA, Rg=10K, f=1.0KHz		1.0	10	dB