Low Saturation Voltage NPN Transistor for Muting Circuits BLUE ROCKET PBSS4160T Silicon SOT23 Package

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Product Description

Product Overview

The PBSS4160T is a Silicon NPN transistor housed in a SOT-23 plastic package. It is designed for general-purpose switching and muting applications, LCD back-lighting, and supply line switching circuits. Key advantages include low VCE(sat) and high current capabilities, with a halogen-free product design. This transistor is suitable for general switching, muting, LCD back-lighting, and linear switching power supply applications.

Product Attributes

Brand: fsbrec
Product Type: NPN Silicon Transistor
Package Type: SOT-23 Plastic Package
Product Features: Low VCE(sat), High Current, Halogen-Free
Marking Code: HU5

Technical Specifications

Parameter	Symbol	Rating Unit	Value
Collector to Base Voltage	VCBO	V	80
Collector to Emitter Voltage	VCEO	V	60
Emitter to Base Voltage	VEBO	V	5
Collector Current	IC	A	1
Peak Collector Current	ICM	A	2
Base Current	IB	A	0.3
Peak Base Current	IBM	A	1
Collector Power Dissipation	PC	mW	400
Junction Temperature	Tj		150
Storage Temperature Range	Tstg		-55150

Parameter	Symbol	Test Conditions	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=60V, IE=0A		100	nA
Collector Cut-Off Current	ICBO	VCB=60V, IE=0A, Tj=150		50	A
Collector Cut-Off Current	ICES	VCE=60V, VBE=0V		100	nA
Emitter Cut-Off Current	IEBO	VEB=5.0V, IC=0A		100	nA
DC Current Gain	hFE	VCE=5.0V, IC=500mA	200	350
		VCE=5.0V, IC=1.0mA	250	400
		VCE=5.0V, IC=1.0A	100	150
Collector-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB=1.0mA	90	110	mV
		IC=500mA, IB=50mA	110	140	mV
		IC=1.0A, IB=100mA	200	250	mV
Base-Emitter Saturation Voltage	VBE(sat)	IC=1.0A, IB=50mA	0.95	1.1	V
Base-Emitter Voltage	VBE	VCE=5.0V, IC=1.0A	0.82	0.9	V
Transition Frequency	fT	VCE=10V, IC=50mA, f=100MHz	150	220	MHz
Output Capacitance	CC	VCB=10V, IE=0, f=1.0MHz	5.5	10	pF