Silicon PNP Transistor SOT23 Package Featuring BLUE ROCKET 9015M-C for Low Noise Amplifier Applications

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Product Description

Product Overview

The 9015M is a Silicon PNP transistor housed in a SOT-23 plastic package. It offers high collector current (PC) and excellent DC current gain (hFE) linearity, making it a complementary pair to the 9014M. This transistor is designed for low-frequency, low-noise pre-amplifier applications.

Product Attributes

Brand: FSB (implied by datasheet URL http://www.fsbrec.com)
Package Type: SOT-23
Transistor Type: PNP Silicon

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Typ	Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	-50	V
Collector to Emitter Voltage	VCEO	-45	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current	IC	-100	mA
Collector Power Dissipation	PC	400	mW	(Ta=25)
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO	-50	V	IC=-0.1mA, IE=0
Collector to Emitter Breakdown Voltage	VCEO	-45	V	IC=-1.0mA, IB=0
Emitter to Base Breakdown Voltage	VEBO	-5.0	V	IE=-0.1mA, IC=0
Collector Cut-Off Current	ICBO	-0.05	A	VCB=-50V, IE=0
Emitter Cut-Off Current	IEBO	-0.05	A	VEB=-5.0V, IC=0
DC Current Gain	hFE	60600		VCE=-5.0V, IC=-1.0mA	60		600
Collector-Emitter Saturation Voltage	VCE(sat)	-0.2-0.7	V	IC=-100mA, IB=-5.0mA		-0.2	-0.7
Base-Emitter Saturation Voltage	VBE(sat)	-0.82-1.0	V	IC=-100mA, IB=-5.0mA		-0.82	-1.0
Base-Emitter Voltage	VBE	-0.65-0.75	V	VCE=-5.0V, IC=-2.0mA		-0.65	-0.75
Transition Frequency	fT	100190	MHz	VCE=-5.0V, IC=-10mA	100		190
Collector Output Capacitance	Cob	4.57.0	pF	VCB=-10V, IE=0, f=1.0MHz	4.5		7.0
Noise Figure	NF	0.710	dB	VCE=-5.0V, IC=-0.2mA, Rg=2.0K, f=1.0KHz, f=200Hz	0.7		10