Double silicon NPN transistor with high voltage amplification BLUE ROCKET MMDT5551 in SOT363 package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMDT5551 is a double silicon NPN transistor housed in a SOT-363 plastic package. It features high breakdown voltage and serves as a complementary pair with the MMDT5401. This halogen-free product is designed for general-purpose high voltage amplification applications.

Product Attributes

Brand: fsbrec
Package Type: SOT-363
Product Type: Double silicon NPN transistor
Complementary Pair: MMDT5401
Halogen Free: Yes
Application: General purpose high voltage amplifier

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO	160	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	600	mA
Base Current	IB	300	mA
Collector Power Dissipation	PC	500	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=180V, IE=0			0.1	A
Emitter Cut-off Current	IEBO	VEB=6.0V, IC=0			0.1	A
DC Current Gain	hFE(1)	VCE=5.0V, IC=10mA	100		300
	hFE(2)	VCE=5.0V, IC=50mA	20		160
	hFE(3)	VCE=5.0V, IC=1.0mA	40		190
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=10mA, IB=1.0mA		0.06	0.15	V
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=50mA, IB=5.0mA		0.09	0.3	V
Base-Emitter Saturation Voltage	VBE(sat)(1)	IC=10mA, IB=1.0mA		0.7	1.0	V
Base-Emitter Saturation Voltage	VBE(sat)(2)	IC=50mA, IB=5.0mA		0.8	1.0	V
Base-Emitter Voltage	VBE	VCE=5.0V, IC=10mA		0.68	0.75	V
Transition Frequency	fT	VCE=10V, IC=10mA	50		110	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz		2.2	5.0	pF
Turn-on Time	ton	IC=100mA, IB1=-IB2=10mA		0.3		s
Turn-off Time	toff				0.4	s
Storage Time	tstg				0.2	s