General amplification PNP transistor BLUE ROCKET BC857-B designed for low current low voltage applications

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Product Description

Product Overview

The BC857 is a Silicon PNP transistor designed for low current and low voltage applications. It is housed in a SOT-23 plastic package and is suitable for general amplification purposes. The transistor offers various hFE classifications for tailored performance.

Product Attributes

Package Type: SOT-23
Transistor Type: PNP Silicon
Application: General power amplifier application

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-50	V
Collector to Emitter Voltage	VCEO	-45	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current - Continuous	IC	-100	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=-30V, IE=0		-0.015		A
DC Current Gain	hFE	VCE=-5.0V, IC=-2.0mA	125		800
Collector to Emitter Saturation Voltage	VCE(sat)(1)	IC=-10mA, IB=-0.5mA		-0.09	-0.3	V
Collector to Emitter Saturation Voltage	VCE(sat)(2)	IC=-100mA, IB=-5.0mA		-0.25	-0.65	V
Base to Emitter Saturation Voltage	VBE(sat)(1)	IC=-10mA, IB=-0.5mA		-0.7		V
Base to Emitter Saturation Voltage	VBE(sat)(2)	IC=-100mA, IB=-5.0mA		-0.9		V
Collector to Emitter Voltage	VCE(ON)(1)	VCE=5.0V, IC=2.0mA	-0.6	-0.65	-0.75	V
Collector to Emitter Voltage	VCE(ON)(2)	VCE=5.0V, IC=10mA		-0.82		V
Transition Frequency	fT	VCE=5.0V, IC=10mA, f=100MHz		150		MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz		4.5		pF
Noise Figure	NF	VCE=6.0V, IC=0.1mA, Rg=10K, f=1.0KHz		2.0	10	dB