High voltage control circuit transistor BLUE ROCKET MMBTA92T silicon PNP type in compact SOT89 package

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Product Description

Product Overview

The MMBTA92T is a high-voltage, low-saturation voltage, silicon PNP transistor designed for use in a SOT-89 plastic package. It features low collector output capacitance and serves as a complementary pair to the MMBTA42T. This transistor is specifically suited for high-voltage control circuits.

Product Attributes

Brand: Fsb (inferred from URL)
Package Type: SOT-89
Semiconductor Type: PNP Silicon Transistor
Marking: H2D (Company Code: H, Product Type: 2D, Lot No. Code: ** )

Technical Specifications

Parameter	Symbol	Rating Unit	Value
Collector to Base Voltage	VCBO	V	-300
Collector to Emitter Voltage	VCEO	V	-300
Emitter to Base Voltage	VEBO	V	-5.0
Collector Current - Continuous	IC	mA	-500
Collector Power Dissipation	PC	mW	500
Junction Temperature	Tj		150
Storage Temperature Range	Tstg		-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-100A, IE=0			-300	V
Collector to Emitter Breakdown Voltage	VCEO	IC=-1.0mA, IB=0			-300	V
Emitter to Base Breakdown Voltage	VEBO	IE=-100A, IC=0			-5.0	V
Collector Cut-Off Current	ICBO	VCB=-200V, IE=0			-0.25	A
Emitter Base Cut-Off Current	IEBO	VBE=-3.0V, IC=0			-0.1	A
DC Current Gain	hFE(1)	VCE=-10V, IC=-10mA	40
DC Current Gain	hFE(2)	VCE=-10V, IC=-30mA	25
DC Current Gain	hFE(3)	VCE=-10V, IC=-1.0mA	25
Collector to Emitter Saturation Voltage	VCE(sat)	IC=-20mA, IB=-2.0mA			-0.5	V
Emitter to Base Saturation Voltage	VBE(sat)	IC=-20mA, IB=-2.0mA			-0.9	V
Transition Frequency	fT	VCE=-20V, IC=-10mA, f=100MHz		50		MHz
Collector-Base Capacitance	Ccb	VCB=-20V, IE=0, f=1.0MHz			6.0	pF