Silicon PNP Transistor BLUE ROCKET 8550M-C SOT-23 Package Power Amplifier Component

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Product Description

Product Overview

The 8550M Rev.F is a Silicon PNP transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the 8050M and is designed for power amplifier applications. This transistor offers various hFE classifications (B, C, D) with corresponding marking codes (HY2B, HY2C, HY2D) for specific gain ranges.

Product Attributes

Brand: fsbrec
Package Type: SOT-23
Transistor Type: PNP Silicon

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-25	V
Emitter to Base Voltage	VEBO	-6.0	V
Collector Current	IC	-1.5	A
Base Current	IB	-0.5	A
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-0.1mA, IE=0			-40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=-2.0mA, IB=0			-25	V
Emitter to Base Breakdown Voltage	VEBO	IE=-0.1mA, IC=0			-6.0	V
Collector Cut-Off Current	ICBO	VCB=-35V, IE=0			-0.1	A
Emitter Cut-Off Current	IEBO	VEB=-6.0V, IC=0			-0.1	A
DC Current Gain	hFE(1)	VCE=-1.0V, IC=-100mA	85		300
	hFE(2)	VCE=-1.0V, IC=-800mA	40
	hFE(3)	VCE=-1.0V, IC=-5.0mA	45
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-800mA, IB=-80mA		-0.28	-0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-800mA, IB=-80mA		-0.98	-1.2	V
Base-Emitter Voltage	VBE	VCE=-1.0V, IC=-10mA		-0.66	-1.0	V
Transition Frequency	fT	VCE=-10V, IC=-50mA		100	200	MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz			15	pF