General purpose high voltage NPN transistor BLUE ROCKET MMBT5551T in SOT89 package for amplification

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Product Description

Product Overview

The MMBT5551T is a high-voltage Silicon NPN transistor housed in a SOT-89 plastic package. It offers high breakdown voltage and serves as a complementary pair with the MMBT5401T. This halogen-free product is designed for general-purpose high-voltage amplification applications.

Product Attributes

Package Type: SOT-89
Transistor Type: NPN Silicon
Certifications: Halogen-free
Complementary Pair: MMBT5401T

Technical Specifications

General Purpose High Voltage Amplifier

Parameter	Symbol	Value	Unit	Notes
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO	160	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current - Continuous	IC	600	mA
Collector Power Dissipation	PC	500	mW	(Ta=25)
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Collector Cut-Off Current	ICBO	0.1	A	VCB=180V, IE=0
Emitter Base Cut-Off Current	IEBO	0.1	A	VEB=6.0V, IC=0
DC Current Gain (hFE)	hFE(1)	50400		VCE=5.0V, IC=10mA
DC Current Gain (hFE)	hFE(2)	20160		VCE=5.0V, IC=50mA
DC Current Gain (hFE)	hFE(3)	40190		VCE=5.0V, IC=1.0mA
Collector to Emitter Saturation Voltage	VCE(sat) (1)	0.060.15	V	IC=10mA, IB=1.0mA
Collector to Emitter Saturation Voltage	VCE(sat) (2)	0.090.3	V	IC=50mA, IB=5.0mA
Emitter to Base Saturation Voltage	VBE(sat) (1)	0.71.0	V	IC=10mA, IB=1.0mA
Emitter to Base Saturation Voltage	VBE(sat) (2)	0.81.0	V	IC=50mA, IB=5.0mA
Emitter to Base Voltage	VBE	0.680.75	V	VCE=5.0V, IC=10mA
Transition Frequency	fT	50110	MHz	VCE=10V, IC=10mA
Collector Output Capacitance	Cob	2.25.0	pF	VCB=10V, IE=0, f=1.0MHz
Turn-on Time	ton	0.3	s	IC=100mA, IB1=-IB2=10mA
Turn-off Time	toff	0.4	s
Storage Time	tstg	0.2	s