NPN transistor BLUE ROCKET BC817 designed for power amplification switching in electronic applications

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Product Description

Product Overview

The BC817 is a high-performance NPN silicon transistor designed for general power amplification and switching applications. It features a high collector current (IC) and serves as a complementary pair to the BC807. Its robust design and SOT-23 plastic package make it suitable for various industrial and electronic circuits.

Product Attributes

Brand: FsbRec (implied by datasheet URL)
Package Type: SOT-23 Plastic Package
Complementary Pair: BC807
Marking Codes: H6A, H6B, H6C

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	50	V
Collector to Emitter Voltage	VCEO	45	V
Emitter to Base Voltage	VEBO	5.0	V
Collector Current - Continuous	IC	500	mA
Collector Current - Peak	ICM	1.0	A
Collector Power Dissipation	PC	250	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A, IE=0			50	V
Collector to Emitter Breakdown Voltage	VCEO	IC=10mA, IB=0			45	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A, Ic=0			5.0	V
Collector Cut-Off Current	ICBO	VCB=20V, IE=0			0.1	A
Emitter Cut-Off Current	IEBO	VEB=5.0V, IE=0			0.1	A
DC Current Gain	hFE(1)	VCE=1.0V, IC=100mA	100		600
DC Current Gain	hFE(2)	VCE=1.0V, IC=500mA		40
Collector to Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=50mA			0.7	V
Base to Emitter Voltage	VBE	VCE=1.0V, IC=500mA		1.2		V
Transition Frequency	fT	VCE=5.0V, IC=10mA			100	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			5.0	pF