Power Amplifier Transistor BLUE ROCKET 8550M Silicon PNP SOT23 Electronic Component

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 8550M is a Silicon PNP transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the 8050M and is designed for power amplifier applications. This transistor is suitable for various electronic circuits requiring amplification and switching capabilities.

Product Attributes

Brand: fsbrec
Package Type: SOT-23
Transistor Type: PNP Silicon
Complementary Pair: 8050M

Technical Specifications

Description	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-25	V
Emitter to Base Voltage	VEBO	-6.0	V
Collector Current	IC	-1.5	A
Base Current	IB	-0.5	A
Collector Power Dissipation	PC	300	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-0.1mA, IE=0	-40			V
Collector to Emitter Breakdown Voltage	VCEO	IC=-2.0mA, IB=0	-25			V
Emitter to Base Breakdown Voltage	VEBO	IE=-0.1mA, IC=0	-6.0			V
Collector Cut-Off Current	ICBO	VCB=-35V, IE=0		-0.1		A
Emitter Cut-Off Current	IEBO	VEB=-6.0V, IC=0		-0.1		A
DC Current Gain (1)	hFE(1)	VCE=-1.0V, IC=-100mA	85		300
DC Current Gain (2)	hFE(2)	VCE=-1.0V, IC=-800mA	40
DC Current Gain (3)	hFE(3)	VCE=-1.0V, IC=-5.0mA	45
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-800mA, IB=-80mA		-0.28	-0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-800mA, IB=-80mA		-0.98	-1.2	V
Base-Emitter Voltage	VBE	VCE=-1.0V, IC=-10mA		-0.66	-1.0	V
Transition Frequency	fT	VCE=-10V, IC=-50mA	100		200	MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz			15	pF