Silicon PNP Transistor BLUE ROCKET MMBT4403 SOT23 Package General Purpose Amplification Switching

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Product Description

Product Overview

The MMBT4403 is a Silicon PNP transistor housed in a SOT-23 plastic package. It is designed for general-purpose amplification and switching applications, capable of handling collector currents up to 500 mA. This transistor offers robust performance with key electrical characteristics and is suitable for various electronic circuits.

Product Attributes

Package Type: SOT-23
Transistor Type: PNP Silicon

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-40	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current	IC	-600	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Emitter Breakdown Voltage	VCEO	IC=-0.1mA, IB=0	-40			V
Collector to Base Breakdown Voltage	VCBO	IC=-1.0mA, IE=0	-40			V
Emitter to Base Breakdown Voltage	VEBO	IE=-0.1mA, IC=0	-5.0			V
Collector Cut-Off Current	ICBO	VCB=-40V, IE=0			-50	nA
Emitter Cut-Off Current	IEBO	VEB=-5.0V, IC=0			-50	nA
DC Current Gain	hFE	VCE=-2.0V, IC=-150mA	100		300
		VCE=-1.0V, IC=-0.1mA	30
		VCE=-1.0V, IC=-1.0mA	60
		VCE=-1.0V, IC=-10mA	100
		VCE=-2.0V, IC=-500mA	20
Collector-Emitter Saturation voltage	VCE(sat)	IC=-150mA, IB=-15mA		-0.4		V
Collector-Emitter Saturation voltage	VCE(sat)	IC=-500mA, IB=-50mA		-0.75		V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-150mA, IB=-15mA	-0.75	-0.95		V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA		-1.3		V
Transition Frequency	fT	VCE=-10V, IC=-20mA, f=100MHz		200		MHz
Delay Time	td	VCC=-30V, IC=-150mA, IB1=-15mA		15		ns
Rise Time	tr			20		ns
Storage Time	ts	VCC=-30V, IC=-150mA, IB1=IB2=-15mA		225		ns
Fall Time	tf			30		ns