Amplification Solutions Featuring BLUE ROCKET 2SB649A-C Silicon PNP Transistor TO126 Plastic Package

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Product Description

Product Overview

The 2SB649(A) is a Silicon PNP transistor designed for low-frequency power amplification. It is a complementary pair to the 2SD669(A) and comes in a TO-126 plastic package. This transistor is suitable for various amplification tasks in electronic circuits.

Product Attributes

Brand: Fsb (implied by datasheet URL)
Package Type: TO-126 Plastic Package
Transistor Type: PNP Silicon Transistor
Complementary Pair: 2SD669(A)
Marking Code: BR B649 B (for hFE Class B)

Technical Specifications

Parameter	Symbol	Rating / Test Conditions	Value / Unit
Collector to Emitter Voltage	VCEO	(2SB649)	-120 V
Collector to Emitter Voltage	VCEO	(2SB649A)	-160 V
Collector to Base Voltage	VCBO		-180 V
Emitter to Base Voltage	VEBO		-5.0 V
Collector Current - Continuous	IC		-1.5 A
Peak Collector Current	ICP		-3.0 A
Collector Power Dissipation (Ambient)	PC	(Ta=25)	1.0 W
Collector Power Dissipation (Case)	PC	(Tc=25)	20 W
Junction Temperature	Tj		150
Storage Temperature Range	Tstg		-55150
Collector to Base Breakdown Voltage	VCBO	IC=-1.0mA, IE=0	-180 V
Collector to Emitter Breakdown Voltage	VCEO	IC=-10mA, RBE= (2SB649)	-120 V
Collector to Emitter Breakdown Voltage	VCEO	IC=-10mA, RBE= (2SB649A)	-160 V
Emitter to Base Breakdown Voltage	VEBO	IE=-1.0mA, IC=0	-5.0 V
Collector Cut-Off Current	ICBO	VCB=-160V, IE=0	-10 A
DC Current Gain	hFE	VCE=-5.0V, IC=-150mA	60320
DC Current Gain	hFE	VCE=-5.0V, IC=-500mA	30 (Typ)
Collector to Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA	-1.0 V
Base to Emitter Saturation Voltage	VBE(sat)	VCE=-5.0V, IC=-150mA	-1.5 V
Transition Frequency	fT	VCE=-5.0V, IC=-150mA	140 MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz	27 pF
hFE Classifications	Symbol	hFE Range
	B	60120
	C	100200
	D	160320
Pin Configuration	PIN 1	Emitter
	PIN 2	Collector
	PIN 3	Base