NPN Transistor BLUE ROCKET 8050M-C Silicon Type in SOT23 Package Ideal for Amplifier Electronics

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Product Description

Product Overview

The 8050M is a Silicon NPN transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the 8550M and is designed for power amplifier applications. This transistor offers reliable performance with defined electrical characteristics and breakdown voltages suitable for various electronic circuits.

Product Attributes

Type: NPN Semiconductor Transistor
Package: SOT-23 Plastic Package
Complementary Pair: 8550M

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	6	V
Collector Current - Continuous	IC	1.5	A
Base Current	IB	0.5	A
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0			40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=2.0mA, IB=0			25	V
Emitter to Base Breakdown Voltage	VEBO	IC=0.1mA, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=35V, IE=0		0.1		A
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0		0.1		A
DC Current Gain	hFE(1)	VCE=1.0V, IC=100mA	85		300
DC Current Gain	hFE(2)	VCE=1.0V, IC=800mA		40
DC Current Gain	hFE(3)	VCE=1.0V, IC=5.0mA		45
Collector to Emitter Saturation Voltage	VCE(sat)	IC=800mA, IB=80mA		0.28	0.5	V
Base to Emitter Voltage	VBE	VCE=1.0V, IC=10mA		0.66	1.0	V
Base to Emitter Saturation Voltage	VBE(sat)	IC=800mA, IB=80mA		0.98	1.2	V
Transition Frequency	fT	IC=50mA, VCE=10V	100		190	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			9.0	pF