Silicon NPN Transistor BLUE ROCKET 8050T-D Power Amplifier Component in SOT-89 Plastic Package

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Product Description

Product Overview

The 8050T is a Silicon NPN transistor housed in a SOT-89 plastic package. It serves as a complementary pair to the 8550T and is designed for power amplifier applications. This transistor offers key electrical characteristics suitable for various amplification circuits.

Product Attributes

Brand: fsbrec
Package Type: SOT-89 Plastic Package
Transistor Type: NPN Silicon
Complementary Pair: 8550T

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current - Continuous	IC	1.5	A
Collector Base - Continuous	IB	0.5	A
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO	40	V	IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage	VCEO	25	V	IC=2.0mA, IB=0
Emitter to Base Breakdown Voltage	VEBO	6.0	V	IE=0.1mA, IC=0
Collector Cut-Off Current	ICBO	0.1	A	VCB=35V, IE=0
Emitter Base Cut-Off Current	IEBO	0.1	A	VEB=6.0V, IC=0
DC Current Gain (hFE(1))	hFE(1)	85300		VCE=1.0V, IC=100mA
DC Current Gain (hFE(2))	hFE(2)	40		VCE=1.0V, IC=800mA
DC Current Gain (hFE(3))	hFE(3)	45		VCE=1.0V, IC=5.0mA
Collector to Emitter Saturation Voltage	VCE(sat)	0.280.5	V	IC=800mA, IB=80mA
Emitter to Base Saturation Voltage	VBE(sat)	0.981.2	V	IC=800mA, IB=80mA
Emitter to Base Voltage	VBE	0.661.0	V	VCE=1.0V, IC=10mA
Transition Frequency	fT	100190	MHz	VCE=10V, IC=50mA
Collector Output Capacitance	Cob	9.0	pF	VCB=10V, IE=0, f=1.0MHz