NPN transistor CBI 2N3904U plastic encapsulated device designed for low current low voltage circuits

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Product Description

Product Overview

This NPN transistor, a compliment to the 2N3906, is designed for low current and low voltage applications. It features plastic encapsulation for robust performance.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Transistor
Encapsulation: Plastic
Marking: 1A

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				0.2	A
Collector Power Dissipation	PC				0.5	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0	6			V
Collector cut-off current	ICBO	VCB=30V,IE=0			0.05	A
Emitter cut-off current	IEBO	VEB=6V,IC=0			0.05	A
DC current gain	hFE	VCE=1V,IC=0.1mA	60
		VCE=1V,IC=1mA	80
		VCE=1V,IC=10mA	100		300
		VCE=1V,IC=50mA	60
		VCE=1V,IC=100mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=10mA,IB=1mA		0.2		V
Collector-emitter saturation voltage	VCE(sat)	IC=50mA,IB=5mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=10mA,IB=1mA		0.65	0.85	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA,IB=5mA		0.95		V
Transition frequency	fT	VCE=20V,IC=10mA,f=100MHz		300		MHz
Collector capacitance	Cc	VCB=5V,IE=0,f=1MHz			4	pF
Emitter capacitance	Ce	VEB=0.5V,IC=0,f=1MHz			8	pF
Noise figure	NF	VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz, RS=1K			5	dB
Delay time	td				35	ns
Rise time	tr				35	ns
Storage time	tS				200	ns
Fall time	tf	IC=10mA , IB1=-IB2= 1mA			50	ns
Collector cut-off current	ICEX	VCE=30V,VBE(off)=3V			0.05	A