NPN Darlington Transistor CBI BCV27T with 40 Volt Collector Base Voltage and Plastic Surface Mounted Package

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Product Description

Product Overview

The BCV27T is an NPN Darlington transistor specifically designed for preamplifier input applications. It offers robust performance characteristics suitable for demanding electronic circuits.

Product Attributes

Marking: FF
Package Outline: Plastic surface mounted package; 3 leads SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta = 25 OC)
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				30	V
Emitter-Base Voltage	VEBO				10	V
Collector Current	IC				500	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance From Junction To Ambient	RJA			416		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Characteristics at Ta = 25 OC
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA, IB=0	30			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	10			V
Collector cut-off current	ICBO	VCB=30V, IE=0		0.1		A
Emitter cut-off current	IEBO	VEB=10V, IC=0		0.1		A
DC current gain	hFE(1)	VCE=1V, IC=1mA		4000
DC current gain	hFE(2)	VCE=5V, IC=10mA		10000
DC current gain	hFE(3)	VCE=5V, IC=100mA		20000
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=0.1mA		1		V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=0.1mA		1.5		V
Transition frequency	fT	VCE=5V,IC=50mA, f=100MHz		170		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		3.5		pF