Compact dual transistor module CBI BC846DW featuring two NPN transistors in single SOT-363 package
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
This plastic-encapsulated dual transistor offers two NPN transistors within a single package, significantly reducing component count and board space. It ensures no mutual interference between the transistors, making it suitable for various electronic applications. The device is designed for efficient operation and reliability.
Product Attributes
- Type: Dual Transistor (NPN+NPN)
- Package: SOT-363
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 65 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current Continuous | IC | 0.1 | A | |
| Collector Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55-150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 80 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 65 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V |
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 15 | nA |
| Emitter cut-off current | IEBO | IC=0, VEB=5V | 5 | A |
| DC current gain | hFE | VCE=5V,IC=2mA | 110 | |
| Collector-emitter saturation voltage (1) | VCE(sat)(1) | IC=10mA,IB=0.5mA | 0.1 | V |
| Collector-emitter saturation voltage (2) | VCE(sat)(2) | IC=100mA,IB=5mA | 0.3 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=10mA,IB=0.5mA | 0.77 | V |
| Transition frequency | fT | VCB=5V,IE=10mA,f=100MHz | 100 | MHz |
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 1.5 | pF |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina