NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial Planar SOT523 Package

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three DC current gain groups (Q, R, and S) and is housed in a plastic surface-mounted SOT-523 package with 3 leads.

Product Attributes

Origin: Heyuan China Base Electronics Technology Co., Ltd.
Material: Silicon Epitaxial Planar
Package Type: Plastic surface mounted package; 3 leads SOT-523
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Group Q	Group R	Group S	Unit	Conditions
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage	VCBO				20	V
Collector Emitter Voltage	VCEO				12	V
Emitter Base Voltage	VEBO				3	V
Collector Current	IC				100	mA
Power Dissipation	Ptot				200	mW
Junction Temperature	Tj				150	OC
Storage Temperature Range	TS				-65 to +150	OC
Characteristics (Ta = 25 OC)
DC Current Gain	hFE	50	80	125	-	VCE = 10 V, IC = 20 mA
Collector Cutoff Current	ICBO			1	A	VCB = 10 V
Emitter Cutoff Current	IEBO			1	A	VEB = 1 V
Gain Bandwidth Product	fT		3	-	GHz	VCE = 10 V, IC = 20 mA
Feed-Back Capacitance	Cre ¹⁾		0.55	1	pF	VCB = 10 V, f = 1 MHz
Noise Figure	NF		1.1	2	dB	VCE = 10 V, IC = 7 mA, f = 1 GHz