General purpose electronic transistor CBI SS8050 NPN bipolar junction for amplification and switching circuits

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Product Description

Product Overview

The SS8050 is an NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring amplification or switching functionalities.

Product Attributes

Marking: Y1
Package: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				1.5	A
Collector Power Dissipation	PC				0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	A
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 100mA	200		350
DC current gain	hFE(2)	VCE=1V, IC= 800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA			1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100		MHz