Darlington Transistor CBI MMBTA64 PNP Silicon Epitaxial Planar Transistor Suitable for Various Circuits

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Product Description

Product Overview

This product is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications. It functions as a Darlington transistor, offering high DC current gain. Available in a SOT-23 plastic package, it is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package
Transistor Type: PNP Silicon Epitaxial Planar Transistor, Darlington Transistor

Technical Specifications

Parameter	Symbol	Model	Min.	Max.	Unit	Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO			30	V
Collector Emitter Voltage	-VCEO			30	V
Emitter Base Voltage	-VEBO			10	V
Collector Current	-IC			500	mA
Power Dissipation	Ptot			200	mW
Junction Temperature	Tj			150	C
Storage Temperature Range	TS		-55	+150	C
Characteristics (Ta = 25 C)
DC Current Gain	hFE	MMBTA63	5000		-	-VCE = 5 V, -IC = 10 mA
		MMBTA64	10000		-	-VCE = 5 V, -IC = 10 mA
		MMBTA63	10000		-	-VCE = 5 V, -IC = 100 mA
		MMBTA64	20000		-	-VCE = 5 V, -IC = 100 mA
Collector Cutoff Current	-ICBO		-	100	nA	-VCB = 30 V
Emitter Cutoff Current	-IEBO		-	100	nA	-VEB = 10 V
Collector Emitter Breakdown Voltage	-V(BR)CEO		30	-	V	-IC = 100 A
Collector Emitter Saturation Voltage	-VCE(sat)		-	1.5	V	-IC = 100 mA, -IB = 0.1 mA
Base Emitter On Voltage	-VBE(on)		-	2	V	-VCE = 5 V, -IC = 100 mA
Transition Frequency	fT		125	-	MHz	-VCE = 5 V, IE = 10 mA
Marking
MMBTA63		2U
MMBTA64		2V