SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BC846-BC850 series are NPN Silicon Epitaxial Transistors designed for switching and amplifier applications. For complementary PNP types, the BC856-BC860 is recommended. These transistors are housed in a SOT-23 Plastic Package.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Transistor
Package: SOT-23 Plastic Package

Technical Specifications

Parameter	Symbol	BC846	BC847, BC850	BC848, BC849	Units
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	80	50	30	V
Collector Emitter Voltage	VCEO	65	45	30	V
Emitter Base Voltage	VEBO	6	6	5	V
Collector Current	IC	100				mA
Peak Collector Current	ICM	200				mA
Power Dissipation	Ptot	200				mW
Junction Temperature	TJ	150				C
Storage Temperature Range	TS	- 65 to + 150				C
Characteristics (Tamb = 25 C)
DC Current Gain at VCE = 5 V, IC =2 mA	hFE	110 - 220	200 - 450	420 - 800	-
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCEsat	- 250				mV
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA	VCEsat	- 600				mV
Base Emitter On Voltage at IC = 2 mA, VCE = 5 V	VBE(on)	580 - 700				mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5V	VBE(on)	- 720				mV
Collector Cutoff Current at VCB = 30 V	ICBO	- 15				nA
Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	300				MHz
Output Capacitance at VCB = 10 V, f = 1 MHz	Cob	- 6				pF
Input Capacitance at VEB = 0.5 V, f = 1 MHz	Cib	9				pF
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f =1 KHz	NF	10 dB (BC846, BC847, BC848)	4 dB (BC846, BC847, BC848)	4 dB (BC846, BC847, BC848)	-
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz	NF	-	-	3 dB (BC849, BC850)	-