Electronic Component CBI MPSA42U NPN Transistor High Breakdown Voltage Low Saturation Voltage Device

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Product Description

Product Overview

This NPN transistor is designed for applications requiring high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary component to the MPSA92U (PNP) transistor. Marked as A42, this component is suitable for various electronic circuits where these characteristics are critical. Its SOT-89 package outline ensures compatibility with standard surface-mount assembly processes.

Product Attributes

Complementary to MPSA92U (PNP)
Marking: A42
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-89

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO			300	V
Collector-Emitter Voltage	VCEO			300	V
Emitter-Base Voltage	VEBO			5	V
Collector Current - Continuous	IC			0.3	A
Collector Power Dissipation	PC			0.35	W
Thermal Resistance, Junction to Ambient	RJA			357	/mW
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	300		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1mA, IB=0	300		V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100A, IC=0	5		V
Collector cut-off current	ICBO	VCB=200V, IE=0		0.25	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0		0.1	A
DC current gain hFE	hFE(1)	VCE= 10V, IC= 1mA	60
DC current gain hFE	hFE(2)	VCE= 10V, IC=10mA	100	200
DC current gain hFE	hFE(3)	VCE=10V, IC=30mA	60
Collector-emitter saturation voltage	VCE(sat)	IC=20mA, IB= 2mA		0.2	V
Base-emitter saturation voltage	VBE(sat)	IC= 20mA, IB=2mA		0.9	V
Transition frequency	fT	VCE= 20V, IC= 10mA, f=30MHz	50		MHz
SOT-89 PACKAGE OUTLINE (Dimensions in Millimeters)
Dimension	Symbol	Min	Max
	A	1.40	1.60
	B	2.95	3.05
	b1	1.45	1.70
	b2	0.45	0.56
	b3	0.35	0.50
	C	0.35	0.50
	D	4.40	4.60
	E	2.35	2.55
	HE	3.90	4.40
	Lp	0.90	1.10