Switching and General Purpose Electronic Circuit Transistor CBI BC858CW NPN Silicon Epitaxial Planar

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, making it suitable for a range of electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Planar Transistor

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	BC849W	BC850W	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	80	50	30	30	50	V
Collector Emitter Voltage	VCEO	65	45	30	30	45	V
Emitter Base Voltage	VEBO	6	6	5	5	5	V
Collector Current	IC	100					mA
Peak Collector Current	ICM	200					mA
Total Power Dissipation	Ptot	200					mW
Junction Temperature	Tj	150					C
Storage Temperature Range	Tstg	-55 to +150					C
Characteristics at Ta = 25 C
DC Current Gain	hFE	110-220	200-450	420-800	-	-	-
		BC846AW~BC850AW	BC846BW~BC850BW	BC846CW~BC850CW

Collector Base Voltage at IC = 10 A	VCBO	80	50	30	30	50	V
Collector Emitter Voltage at IC = 10 mA	VCEO	65	45	30	30	45	V
Emitter Base Voltage at IE = 1 A	VEBO	6	6	5	5	5	V
Collector Base Cutoff Current at VCB = 30 V	ICBO	-15					nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	-100					nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	-0.25					V
	VCE(sat)	IC = 100 mA, IB = 5 mA					V	-0.6
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VBE	-0.7					V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VBE	VCE = 5 V, IC = 10 mA					V	-0.77
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	100					MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz	Cob	-4.5					pF