Axial planar die PNP transistor CBI BC807-40 ideal for general purpose and automatic insertion processes

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Product Description

Product Overview

This PNP transistor is ideally suited for automatic insertion due to its axial planar die construction. A complementary NPN type (BC817) is available. It is designed for general-purpose applications requiring reliable performance.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23
Construction: Axial planar die

Technical Specifications

Symbol	Parameter	Model	Test Conditions	Value	Units
Maximum Ratings (TA=25 unless otherwise noted)
VCBO	Collector-Base Voltage			-50	V
VCEO	Collector-Emitter Voltage			-45	V
VEBO	Emitter-Base Voltage			-5	V
IC	Collector Current - Continuous			-0.5	A
PC	Collector Power Dissipation			0.3	W
Tj	Junction Temperature			150
Tstg	Storage Temperature			-55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
VCBO	Collector-base breakdown voltage		IC= -10A, IE=0	-50	V
VCEO	Collector-emitter breakdown voltage		IC= -10mA, IB=0	-45	V
VEBO	Emitter-base breakdown voltage		IE= -1A, IC=0	-5	V
ICBO	Collector cut-off current		VCB= -45V, IE=0	-0.1	A
ICEO	Collector cut-off current		VCE= -40V, IB=0	-0.2	A
IEBO	Emitter cut-off current		VEB= -4 V, IC=0	-0.1	A
hFE(1)	DC current gain	807-16	VCE= -1V, IC= -100mA	100
		807-25		250
		807-40		400
VCE(sat)	Collector-emitter saturation voltage		IC=-500mA, IB= -50mA	-0.7	V
VBE(sat)	Base-emitter saturation voltage		IC= -500mA, IB= -50mA	-1.2	V
fT	Transition frequency		VCE= -5V, IC= -10mA, f=100MHz	100	MHz