NPN Silicon Epitaxial Planar Transistor CBI MPSA44U for High Voltage Electronic Circuit Applications

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for high voltage switching and amplifier applications. It offers reliable performance with specific electrical characteristics suitable for various electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Material: Silicon Epitaxial Planar
Package: SOT-89

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings
Collector Base Voltage	VCBO	500	V	(Ta = 25 OC)
Collector Emitter Voltage	VCEO	400	V	(Ta = 25 OC)
Emitter Base Voltage	VEBO	6	V	(Ta = 25 OC)
Collector Current	IC	300	mA	(Ta = 25 OC)
Total Power Dissipation	Ptot	625	mW	(Ta = 25 OC)
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC
Characteristics
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 1 mA
DC Current Gain	hFE	50	-	VCE = 10 V, IC = 10 mA
DC Current Gain	hFE	45	-	VCE = 10 V, IC = 50 mA
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 100 mA
Collector Base Cutoff Current	ICBO	-0.1	A	VCB = 400 V
Collector Emitter Cutoff Current	ICES	-0.5	A	VCE = 400 V
Emitter Base Cutoff Current	IEBO	-0.1	A	VEB = 4 V
Collector Base Breakdown Voltage	V(BR)CBO	500	V	IC = 100 A
Collector Emitter Breakdown Voltage	V(BR)CEO	400	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 100 A
Collector Emitter Saturation Voltage	VCE(sat)	0.4	V	IC = 1 mA, IB = 0.1 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.5	V	IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.75	V	IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	0.75	V	IC = 10 mA, IB = 1 mA
Collector Output Capacitance	Cob	7	pF	VCB = 20 V, f = 1 MHz