Low voltage plastic encapsulated PNP transistor CBI 2SB1197KR with continuous collector current minus 0.8A

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Product Description

Product Overview

This is a plastic-encapsulated PNP transistor designed for general-purpose applications. It features a low VCE(sat) of less than -0.5V at IC / IB = -0.5A / -50mA and a continuous collector current (IC) of -0.8A. This transistor complements the 2SD1781 and is suitable for use in various electronic circuits requiring PNP amplification or switching capabilities.

Product Attributes

Type: Transistor (PNP)
Encapsulation: Plastic-Encapsulate
Package: SOT-23
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCBO	Collector-Base Voltage			-40	V
VCEO	Collector-Emitter Voltage			-32	V
VEBO	Emitter-Base Voltage			-5	V
IC	Collector Current - Continuous			-0.8	A
PC	Collector Power Dissipation			200	mW
TJ	Junction Temperature			150
Tstg	Storage Temperature		-55	150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)CBO	Collector-base breakdown voltage	IC =-50A, IE=0	-40		V
V(BR)CEO	Collector-emitter breakdown voltage	IC = -1mA, IB=0	-32		V
V(BR)EBO	Emitter-base breakdown voltage	IE= -50A, IC=0	-5		V
ICBO	Collector cut-off current	VCB=-20V,IE=0		-0.5	A
IEBO	Emitter cut-off current	VEB= -4V,IC=0		-0.5	A
hFE	DC current gain	VCE=-3V,IC= -100mA	82	390
VCE(sat)	Collector-emitter saturation voltage	IC=-500 mA, IB= -50mA		-0.5	V
fT	Transition frequency	VCE=-5V, IC= -50mA, f=100MHz	50	200	MHz
Cob	Collector output capacitance	VCB=-10V,IE=0,f=1MHz	12	30	pF