General Purpose PNP Silicon Epitaxial Planar Transistor CBI MMBTSA1576W with SOT323 Package Design

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Product Description

Product Overview

This is a PNP Silicon Epitaxial Planar Transistor, categorized into three groups (Q, R, and S) based on its DC current gain. It is designed for general-purpose applications and features a SOT-323 package.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: PNP Silicon Epitaxial Planar Transistor
Package: SOT-323

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO	-	-	60	V	-
Collector Emitter Voltage	-VCEO	-	-	50	V	-
Emitter Base Voltage	-VEBO	-	-	6	V	-
Collector Current	-IC	-	-	150	mA	-
Power Dissipation	Ptot	-	-	200	mW	-
Junction Temperature	Tj	-	-	150	C	-
Storage Temperature Range	Tstg	-55	-	150	C	-
Characteristics (Ta = 25 C)
DC Current Gain (Group Q)	hFE	120	-	270	-	-VCE = 6 V, -IC = 1 mA
DC Current Gain (Group R)	hFE	180	-	390	-	-VCE = 6 V, -IC = 1 mA
DC Current Gain (Group S)	hFE	270	-	560	-	-VCE = 6 V, -IC = 1 mA
Collector Base Cutoff Current	-ICBO	-	-	0.1	A	-VCB = 60 V
Emitter Base Cutoff Current	-IEBO	-	-	0.1	A	-VEB = 6 V
Collector Base Breakdown Voltage	-V(BR)CBO	60	-	-	V	-IC = 50 A
Collector Emitter Breakdown Voltage	-V(BR)CEO	50	-	-	V	-IC = 1 mA
Emitter Base Breakdown Voltage	-V(BR)EBO	6	-	-	V	-IE = 50 A
Collector Emitter Saturation Voltage	-VCE(sat)	-	-	0.5	V	-IC = 50 mA, -IB = 5 mA
Transition Frequency	fT	-	140	-	MHz	-VCE = 12 V, -IE = 2 mA, f = 30 MHz
Collector Output Capacitance	Cob	-	-	5	pF	-VCB = 12 V, f = 1 MHz