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General Purpose PNP Silicon Epitaxial Planar Transistor CBI MMBTSA1576W with SOT323 Package Design

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This is a PNP Silicon Epitaxial Planar Transistor, categorized into three groups (Q, R, and S) based on its DC current gain. It is designed for general-purpose applications and features a SOT-323 package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: PNP Silicon Epitaxial Planar Transistor
  • Package: SOT-323

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO - - 60 V -
Collector Emitter Voltage -VCEO - - 50 V -
Emitter Base Voltage -VEBO - - 6 V -
Collector Current -IC - - 150 mA -
Power Dissipation Ptot - - 200 mW -
Junction Temperature Tj - - 150 C -
Storage Temperature Range Tstg -55 - 150 C -
Characteristics (Ta = 25 C)
DC Current Gain (Group Q) hFE 120 - 270 - -VCE = 6 V, -IC = 1 mA
DC Current Gain (Group R) hFE 180 - 390 - -VCE = 6 V, -IC = 1 mA
DC Current Gain (Group S) hFE 270 - 560 - -VCE = 6 V, -IC = 1 mA
Collector Base Cutoff Current -ICBO - - 0.1 A -VCB = 60 V
Emitter Base Cutoff Current -IEBO - - 0.1 A -VEB = 6 V
Collector Base Breakdown Voltage -V(BR)CBO 60 - - V -IC = 50 A
Collector Emitter Breakdown Voltage -V(BR)CEO 50 - - V -IC = 1 mA
Emitter Base Breakdown Voltage -V(BR)EBO 6 - - V -IE = 50 A
Collector Emitter Saturation Voltage -VCE(sat) - - 0.5 V -IC = 50 mA, -IB = 5 mA
Transition Frequency fT - 140 - MHz -VCE = 12 V, -IE = 2 mA, f = 30 MHz
Collector Output Capacitance Cob - - 5 pF -VCB = 12 V, f = 1 MHz

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Company Hefei Purple Horn E-Commerce Co., Ltd.
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