General Purpose Audio Frequency Amplifier Transistor CBI MMBTSC2712 with SOT23 Plastic Package NPN Silicon

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Product Description

Product Overview

The MMBTSC2712 is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose audio frequency amplifier applications. It offers high voltage and current capabilities with VCEO up to 50V and IC up to 150mA. The transistor features high DC current gain (hFE ranging from 70 to 700), low noise with a typical NF of 1dB, and is housed in a small SOT-23 package. It is available in four groups (O, Y, G, L) categorized by their DC current gain.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Application: Audio frequency general purpose amplifier
Package: SOT-23 Plastic Package

Technical Specifications

Symbol	Parameter	Group O	Group Y	Group G	Group L	Unit
Absolute Maximum Ratings (Ta = 25 C)
VCBO	Collector Base Voltage	60					V
VCEO	Collector Emitter Voltage	50					V
VEBO	Emitter Base Voltage	5					V
IC	Collector Current	150					mA
IB	Base Current	30					mA
Ptot	Power Dissipation	200					mW
Tj	Junction Temperature	125					C
Ts	Storage Temperature Range	-55 to +125					C
Characteristics (Tamb = 25 C)
hFE	DC Current Gain (at VCE=6V, IC=2mA)	70	120	200	350	-
		-	-	-	-	140
		-	-	-	-	240
		-	-	-	-	400
		-	-	-	-	700
ICBO	Collector Cutoff Current (at VCB=60V)	0.1					A
IEBO	Emitter Cutoff Current (at VEB=5V)	0.1					A
VCE(sat)	Collector Saturation Voltage (at IC=100mA, IB=10mA)	0.25					V
fT	Transition Frequency (at VCE=10V, IC=1mA)	80					MHz
Cob	Collector Output Capacitance (at VCB=10V, f=1MHz)	2 to 3.5					pF
NF	Noise Figure (at VCE=6V, IC=0.1mA, f=1KHz, Rg=10K)	1 to 10					dB