Audio Frequency Amplifier and Low Speed Switching Transistor CBI 2SB772PU PNP Silicon Epitaxial Type

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Product Description

Product Overview

The 2SB772U is a PNP Silicon Epitaxial Power Transistor designed for audio frequency power amplifier and low-speed switching applications. It offers reliable performance in demanding electronic circuits.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Epitaxial
Color: Not specified
Package: SOT-89
Marking: B772

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector Base Voltage	-VCBO			40	V
Collector Emitter Voltage	-VCEO			30	V
Emitter Base Voltage	-VEBO			5	V
Collector Current	-IC			3	A
Peak Collector Current	-ICP			7	A	(t = 10 ms)
Base Current	-IB			0.6	A
Total Power Dissipation @ Ta = 25 OC	PD			1	W
Total Power Dissipation @ Tc = 25 OC	PD			10	W
Operating and Storage Junction Temperature Range	Tj , Tstg	-65		150	OC
DC Current Gain (Group R)	hFE	30		120	-	@ -VCE = 2 V, -IC = 20 mA
DC Current Gain (Group Q)	hFE	60		200	-	@ -VCE = 2 V, -IC = 20 mA
DC Current Gain (Group P)	hFE	100		320	-	@ -VCE = 2 V, -IC = 20 mA
DC Current Gain (Group E)	hFE	160		400	-	@ -VCE = 2 V, -IC = 20 mA
DC Current Gain (Group)	hFE	200		-	-	@ -VCE = 2 V, -IC = 1 A
Collector Base Cutoff Current	-ICBO			1	A	@ -VCB = 30 V
Emitter Base Cutoff Current	-IEBO			-	-	@ -VEB = 3 V
Collector Base Breakdown Voltage	-V(BR)CBO	40		-	V	@ -IC = 1 mA
Collector Emitter Breakdown Voltage	-V(BR)CEO	30		-	V	@ -IC = 1 mA
Emitter Base Breakdown Voltage	-V(BR)EBO	5		-	V	@ -IE = 1 mA
Collector Emitter Saturation Voltage	-VCE(sat)			0.5	V	@ -IC = 2 A, -IB = 200 mA
Base Emitter Saturation Voltage	-VBE(sat)			2	V	@ -IC = 2 A, -IB = 200 mA
Current Gain Bandwidth Product	fT		80	-	MHz	@ -VCE = 5 V, -IC = 100 mA
Output Capacitance	Cob		55	-	pF	@ -VCB = 10 V, f = 1 MHz