N Channel Power MOSFET BORN BMF18N50G 500 Volt 18 Ampere for Adaptors and Charger Applications
Product Overview
The BMx18N50 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high Drain-Source Voltage (VDSS) of 500V and a continuous Drain Current (ID) of 18A. The MOSFET offers fast switching speeds and low gate charge, with a typical On-Resistance (RDS(ON)) of 0.24 at VGS=10V. The product is compliant with EU RoHS 2011/65/EU directive and is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Line: BMx18N50
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Compliance: EU RoHS 2011/65/EU directive
- Lead Status: Lead free
- Solder Bath Temperature: 265C maximum, 10s per JESD 22-B106
- Mounting Position: Any
- Note on 'G' Suffix: Indicates use of a thick frame.
Technical Specifications
| Symbol | Parameters | Conditions | Value | Unit | TO-220AB/TO-263 | TO-220F |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDSS | Drain-Source Voltage | 500 | V | |||
| ID | Continuous Drain Current | 18 | A | |||
| RDS(ON) | Static Drain-source On Resistance | VGS=10V, TYP | 0.24 | |||
| VGS=10V, ID=9A | 0.24 | 0.28 | ||||
| Fast Switching | ||||||
| Low Gate Charge | ||||||
| Applications | ||||||
| Power switch circuit of adaptor and charger | ||||||
| Maximum Ratings (@TA=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 500 | V | ✔ | ✔ | |
| VGS | Gate-Source Voltage | 30 | V | ✔ | ✔ | |
| ID | Continue Drain Current | 18 | A | ✔ | ✔ | |
| IDM | Pulsed Drain Current (Note1) | 64 | A | ✔ | ✔ | |
| PD | Power Dissipation | 232 | W | ✔ | 45 | |
| EAS | Single Pulse Avalanche Energy (Note1) | 810 | mJ | ✔ | ✔ | |
| TJ | Junction Temperature Range | 150 | C | ✔ | ✔ | |
| TSTG | Storage Temperature Range | -55 to +150 | C | ✔ | ✔ | |
| RJC | Thermal Resistance, Junction to Case | 0.54 | C/W | ✔ | 3.3 | |
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | ✔ | 62.5 | |
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 500 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 500V, VGS=0V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | 4 | V | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=9A | 0.24 | 0.28 | ||
| gfs | Forward Transconductance | VDS=15V, ID=8A | 15 | S | ||
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 3045 | pF | ||
| Coss | Output capacitance | 284 | pF | |||
| Crss | Reverse transfer capacitance | 12 | pF | |||
| Td(on) | Turn-on delay time (Note1) | VDD=250V, ID =18A, RG =10 | 17.5 | ns | ||
| Tr | Turn-on Rise time (Note1) | 42 | ns | |||
| Td(off) | Turn-Off Delay Time (Note1) | 101 | ns | |||
| Tf | Turn-Off Fall time (Note1) | 15.5 | ns | |||
| Qgs | Gate to Source Charge (Note1) | VDD=400V, VGS=10V, ID=20A | 12.7 | nC | ||
| Qgd | Gate to Drain Charge (Note1) | 15.8 | nC | |||
| Qg | Total Gate Charge (Note1) | 50.5 | nC | |||
| VSD | Diode Forward Voltage | ISD=18A | 1.3 | V | ||
| IS | Diode Forward Current | 18 | A | |||
| ISM | Diode Pulsed Current | 64 | A | |||
| Trr | Reverse Recovery Time (Note1) | ISD =50A, VGS=0V, dIF/dt=100A/s | 382 | ns | ||
| Qrr | Reverse Recovery Charge (Note1) | 2.7 | C | |||
| Ordering Information | ||||||
| Order Code | Package | Base Qty | Delivery Mode | |||
| BME18N50/G | TO-220AB | 50pcs/tube | 1kpcs/box, 5kpcs/carton | |||
| BMF18N50/G | TO-220F | 50pcs/tube | 1kpcs/box, 5kpcs/carton | |||
| BMK18N50/G | TO-263 | 50pcs/tube | 1kpcs/box, 5kpcs/carton | |||
| BMK18N50-R/G | TO-263 | 800pcs/reel | 800pcs/box, 4kpcs/carton | |||
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
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