Dual NPN transistor CBI MMDT3904DW in compact SOT363 package suitable for amplification and switching
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The MMDT3904DW is a SOT-363 plastic-encapsulated dual NPN transistor designed for low power amplification and switching applications. It features epitaxial planar die construction for reliable performance.
Product Attributes
- Package: SOT-363
- Transistor Type: Dual NPN (NPN+NPN)
- Marking Code: K6N
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | 60 | V | |||
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current - Continuous | 0.2 | A | |||
| PC | Collector Power Dissipation | 0.2 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC=10A, IE=0 | 60 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=1mA, IB=0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=30V, IE=0 | 0.05 | A | ||
| IEBO | Emitter cut-off current | VEB=5V, IC=0 | 0.05 | A | ||
| hFE | DC current gain | VCE=1V, IC=0.1mA | 40 | |||
| VCE=1V, IC=1mA | 70 | |||||
| VCE=1V, IC=10mA | 100 | 300 | ||||
| VCE=1V, IC=50mA | 60 | |||||
| hFE(5) | DC current gain | VCE=1V, IC=100mA | 30 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC=10mA, IB=1mA | 0.2 | V | ||
| VCE(sat)2 | Collector-emitter saturation voltage | IC=50mA, IB=5mA | 0.3 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC=10mA, IB=1mA | 0.65 | 0.85 | V | |
| VBE(sat)2 | Base-emitter saturation voltage | IC=50mA, IB=5mA | 0.95 | V | ||
| fT | Transition frequency | VCE=20V, IC=10mA, f=100MHz | 300 | MHz | ||
| Cob | Collector output capacitance | VCB=5V, IE=0, f=1MHz | 4 | pF | ||
| NF | Noise figure | VCE=5V, IC=0.1mA, f=1kHz, RS=1K | 5 | dB | ||
| td | Delay time | 35 | nS | |||
| tr | Rise time | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA | 35 | nS | ||
| ts | Storage time | 200 | nS | |||
| tf | Fall time | VCC=3V, IC=10mA, IB1=-IB2=1mA | 50 | nS | ||
| ICEX | Collector cut-off current | VCE=30V, VBE(off)=3V | 0.05 | A | ||
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