NPN silicon epitaxial transistor CBI 2SC3357U designed for noise sensitive VHF UHF CATV applications
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Product Description
Product Overview
The 2SC3357 is an NPN silicon epitaxial transistor engineered for low-noise amplification across VHF, UHF, and CATV bands. It offers a large dynamic range and favorable current characteristics, making it suitable for demanding RF applications. Key performance indicators include a noise figure (NF) of 1.1 dB TYP. and a gain (Ga) of 8.0 dB TYP. at 1.0 GHz under specific test conditions, and improved performance at higher currents with NF = 1.8 dB TYP. and Ga = 9.0 dB TYP. at 1.0 GHz. The transistor is housed in a compact Power Mini Mold package, capable of dissipating up to 2 W when mounted on a 16 cm 0.7 mm ceramic substrate.
Product Attributes
- Type: NPN Silicon Epitaxial Transistor
- Package: Power Mini Mold
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | 20 | V |
| Collector to Emitter Voltage | VCEO | 12 | V |
| Emitter to Base Voltage | VEBO | 3.0 | V |
| Collector Current | IC | 100 | mA |
| Total Power Dissipation (mounted on 16 cm 0.7 mm Ceramic Substrate) | PT* | 1.2 | W |
| Thermal Resistance (mounted on 16 cm 0.7 mm Ceramic Substrate) | Rth(j-a)* | 62.5 | C/W |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature | Tstg | 65 to +150 | C |
| Parameter | Symbol | Condition | TYP. | Unit |
|---|---|---|---|---|
| Noise Figure | NF | VCE = 10 V, IC = 7 mA, f = 1.0 GHz | 1.1 | dB |
| Gain | Ga | VCE = 10 V, IC = 7 mA, f = 1.0 GHz | 8.0 | dB |
| Noise Figure | NF | VCE = 10 V, IC = 40 mA, f = 1.0 GHz | 1.8 | dB |
| Gain | Ga | VCE = 10 V, IC = 40 mA, f = 1.0 GHz | 9.0 | dB |
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