NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKQ Suitable for Electronic Circuit Applications

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor, designed for low-frequency applications, offers reliable performance with key electrical characteristics defined at 25C. It is suitable for various electronic circuits requiring precise current gain and breakdown voltage specifications. The transistor is housed in a SOT-89 package.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-89
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	60	V
Collector Emitter Voltage	VCEO	50	V
Emitter Base Voltage	VEBO	6	V
Collector Current - DC	IC	3	A
Collector Current - Pulse	ICP	6	A	1) Single pulse, PW = 10 ms.
Total Power Dissipation	Ptot	0.5	W	2) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Junction Temperature	TJ	150	C
Storage Temperature Range	TStg	-55 to +150	C
Characteristics (at Ta = 25 C)
DC Current Gain at VCE = 2 V, IC = 0.5 A	hFE	82	-
DC Current Gain at VCE = 2 V, IC = 1.5 A	hFE	39	-
Collector Base Breakdown Voltage at IC = 50 A	V(BR)CBO	60	V
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	50	V
Emitter Base Breakdown Voltage at IE = 50 A	V(BR)EBO	6	V
Collector Cutoff Current at VCB = 60 V	ICBO	0.1	A
Emitter Cutoff Current at VEB = 5 V	IEBO	0.1	A
Collector Emitter Saturation Voltage at IC = 1 A, IB = 50 mA	VCE(sat)	0.35	V
Transition Frequency at VCE = 5 V, -IE = 0.5 A, f = 100 MHz	fT	210	MHz
Output Capacitance at VCB = 10 V, f = 1 MHz	Cob	25	pF
hFE Rank Classification
Rank	Range	Marking
P	82180	DKP
Q	120270	DKQ
R	180390	DKR