Medium Power Amplifier Transistor Suitable For Electronics CBI 2SD1766U NPN Silicon Epitaxial Planar

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for medium power amplification applications. It offers reliable performance with defined electrical characteristics and is suitable for various electronic circuits requiring amplification.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Function: Medium power amplifier
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage	VCBO	40	V
Collector Emitter Voltage	VCEO	32	V
Emitter Base Voltage	VEBO	5	V
Collector Current	IC	2	A
Peak Collector Current (Single pulse, Pw = 20 ms)	ICP	2.5	A
Collector Power Dissipation	PC	0.5	W	1) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	- 55 to + 150	°C
Characteristics at Ta = 25 °C
DC Current Gain at VCE = 3 V, IC = 500 mA	hFE (Group P)	82	-	-
	hFE (Group Q)	120	180	-
	hFE (Group R)	180	270	390
Collector Base Cutoff Current at VCB = 20 V	ICBO	-	-	1 µA
Emitter Base Cutoff Current at VEB = 4 V	IEBO	-	-	1 µA
Collector Base Breakdown Voltage at IC = 50 µA	V(BR)CBO	40	-	- V
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	32	-	- V
Emitter Base Breakdown Voltage at IE = 50 µA	V(BR)EBO	5	-	- V
Collector Emitter Saturation Voltage at IC = 2 A, IB = 200 mA	VCE(sat)	-	-	0.8 V
Transition Frequency at VCE = 5 V, -IE = 500 mA, f = 100 MHz	fT	-	100	- MHz
Collector Base Capacitance at VCB = 10 V, f = 1 MHz	Cob	-	30	- pF