Low noise amplifier transistor CBI MMBTSC3356-3G NPN silicon epitaxial planar type with SOT23 package

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Product Description

Product Overview

The 1 MMBTSC3356 is an NPN silicon epitaxial planar transistor designed for low-noise amplifier applications in the VHF, UHF, and CATV bands. It is available in three DC current gain groups (Q, R, and S) and comes in a SOT-23 plastic package.

Product Attributes

Package Type: SOT-23 Plastic Package
Transistor Type: NPN Silicon Epitaxial Planar

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	20	V
Collector Emitter Voltage	VCEO	12	V
Emitter Base Voltage	VEBO	3	V
Collector Current	IC	100	mA
Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	TS	-65 to +150	C
Characteristics (Ta = 25 C)
DC Current Gain at VCE = 10 V, IC = 20 mA (Group Q)	hFE	50 - 100	-
DC Current Gain at VCE = 10 V, IC = 20 mA (Group R)	hFE	80 - 160	-
DC Current Gain at VCE = 10 V, IC = 20 mA (Group S)	hFE	125 - 250	-
Collector Cutoff Current at VCB = 10 V	ICBO	-	1 A
Emitter Cutoff Current at VEB = 1 V	IEBO	-	1 A
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA	fT	3	GHz
Feed-Back Capacitance at VCB = 10 V, f = 1 MHz	Cre	0.55	1 pF
Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz	NF	1.1	2 dB