SOT23 Package NPN Silicon Epitaxial Transistor CBI BC848B for in Switching and Amplifier Circuits

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Product Description

Product Overview

The BC846...BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. For complementary PNP types, the BC856...BC860 series is recommended. These transistors are housed in a SOT-23 plastic package.

Product Attributes

Package Type: SOT-23 Plastic Package
Transistor Type: NPN Silicon Epitaxial
Complementary Type: PNP transistors BC856...BC860

Technical Specifications

Parameter	Symbol	BC846	BC847, BC850	BC848, BC849	Units
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	80	50	30	V
Collector Emitter Voltage	VCEO	65	45	30	V
Emitter Base Voltage	VEBO	6	5		V
Collector Current	IC		100		mA
Peak Collector Current	ICM		200		mA
Power Dissipation	Ptot		200		mW
Junction Temperature	TJ		150		C
Storage Temperature Range	TS		-65 to +150		C
Characteristics (Tamb = 25 C)
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	110	220		-
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	200	450		-
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	420	800		-
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCEsat			250	mV
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA	VCEsat			600	mV
Base Emitter On Voltage at IC = 2 mA, VCE = 5 V	VBE(on)	580			mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5 V	VBE(on)		700		mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5 V	VBE(on)		720		mV
Collector Cutoff Current at VCB = 30 V	ICBO			15	nA
Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT		300		MHz
Output Capacitance at VCB = 10 V, f = 1 MHz	Cob			6	pF
Input Capacitance at VEB = 0.5 V, f = 1 MHz	Cib		9		pF
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz	NF	10	4		dB
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz	NF			4	dB
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz	NF			3	dB