high voltage PNP transistor CBI MMBTA92 encapsulated in SOT23 plastic package for electronic designs

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Product Description

Product Overview

The MMBTA92 is a high-voltage PNP transistor encapsulated in a SOT-23 plastic package. It is designed for applications requiring high voltage handling capabilities.

Product Attributes

Type: Transistor (PNP)
Package: SOT-23 Plastic-Encapsulate
Marking: 2D

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Voltage	VCBO	(Ta=25 unless otherwise noted)		-300	V
Collector-Emitter Voltage	VCEO	(Ta=25 unless otherwise noted)		-300	V
Emitter-Base Voltage	VEBO	(Ta=25 unless otherwise noted)		-5	V
Collector Current - Continuous	IC	(Ta=25 unless otherwise noted)		-200	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)		300	mW
Junction Temperature	Tj	(Ta=25 unless otherwise noted)		150
Storage Temperature	Tstg	(Ta=25 unless otherwise noted)	-55	150
Thermal Resistance, junction to Ambient	RJA	(Ta=25 unless otherwise noted)		410	/mW
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0	-300		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-300		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-200V, IE=0		-0.25	A
Emitter cut-off current	IEBO	VEB= -5V, IC=0		-0.1	A
DC current gain	hFE(1)	VCE= -10V, IC= -1mA	60
DC current gain	hFE(2)	VCE= -10V, IC=-10mA	100	200
DC current gain	hFE(3)	VCE= -10V, IC=-30mA	60
Collector-emitter saturation voltage	VCE(sat)	IC=-20mA, IB= -2mA		-0.2	V
Base-emitter saturation voltage	VBE(sat)	IC= -20mA, IB= -2mA		-0.9	V
Transition frequency	fT	VCE=-20V, IC= -10mA f=30MHz	50		MHz
Collector Current - Pulsed	ICM	(Ta=25 unless otherwise noted)		-500	mA