NPN Plastic Encapsulated Transistor CBI 2SC2383Y with 160V Collector Emitter Voltage and 1A Current Capacity
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MOQ:
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Delivery Time:
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Product Description
Product Overview
This NPN plastic-encapsulated transistor offers high voltage capability with a VCEO of 160V and a large continuous collector current capacity. It is designed for applications requiring robust performance in terms of voltage and current handling.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: Plastic-Encapsulate Transistors (NPN)
- Marking: 2383
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | ||||
| VCBO | Collector-Base Voltage | 160 | V | |
| VCEO | Collector-Emitter Voltage | 160 | V | |
| VEBO | Emitter-Base Voltage | 6 | V | |
| IC | Collector Current -Continuous | 1 | A | |
| PC | Collector Power Dissipation | 0.5 | W | |
| TJ | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55~+150 | ||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | ||||
| V(BR)CBO | Collector-base breakdown voltage | IC= 100A , IE=0 | 160 | V |
| V(BR)CEO * | Collector-emitter breakdown voltage | IC= 10mA, IB=0 | 160 | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE= 10A, IC=0 | 6 | V |
| ICBO | Collector cut-off current | VCB=150V, IE=0 | 1 | A |
| IEBO | Emitter cut-off current | VEB=6V, IC=0 | 1 | A |
| hFE | DC current gain | VCE=5V, IC=200mA | 100 - 320 | |
| VCE(sat) | Collector-emitter saturation voltage | IC=500mA, IB=50mA | 1 | V |
| VBE | Base-emitter voltage | IC=5mA, VCE= 5V | 0.45 - 0.75 | V |
| fT | Transition frequency | VCE=5V, IC=200mA | 20 | MHz |
| Cob | Collector output capacitance | VCB=10V,IE=0,f=1MHz | 20 | pF |
| *pulse test | ||||
| Rank | Range |
|---|---|
| O | 100-200 |
| Y | 160-320 |
Get in Touch
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina