Electronic Switching Transistor CBI MMBT4401 NPN Type with Plastic Surface Mounted Package

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Product Description

Product Overview

This NPN transistor is a switching transistor designed for various electronic applications. It offers reliable performance with specified maximum ratings and electrical characteristics suitable for general-purpose switching.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23
Material: Plastic surface mounted
Origin: China

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Maximum Ratings (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO			60	V
Collector-Emitter Voltage	VCEO			40	V
Emitter-Base Voltage	VEBO			6	V
Collector Current -Continuous	IC			600	mA
Collector Power dissipation	PC			0.3	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Thermal Resistance, junction to Ambient	RJA			357	/mW
Electrical Characteristics (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100A, IC=0	6		V
Collector cut-off current	ICBO	VCB=50 V, IE=0		0.1	A
Collector cut-off current	ICEO	VCE=30 V, IB=0		0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0		0.1	A
DC current gain	hFE	VCE=1V, IC=150mA	100	300
Collector-emitter saturation voltage	VCE(sat)	IC=150mA, B=15mA		0.4	V
Base-emitter saturation voltage	VBE(sat)	IC= 150mA, IB=15mA		0.95	V
Transition frequency	fT	VCE=10V, IC= 20mA f = 100MHz		250	MHz