Electronic component CBI BC847AW NPN silicon epitaxial planar transistor for diverse circuit designs

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models with varying voltage and current ratings, making it suitable for diverse electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Planar Transistor

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	BC849W	BC850W	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	80	50	30	30	50	V
Collector Emitter Voltage	VCEO	65	45	30	30	45	V
Emitter Base Voltage	VEBO	6	6	5	5	5	V
Collector Current	IC	100					mA
Peak Collector Current	ICM	200					mA
Total Power Dissipation	Ptot	200					mW
Junction Temperature	Tj	150					C
Storage Temperature Range	Tstg	-55 to +150					C
Characteristics (Ta = 25 C)
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	110-220	200-450	420-800	-	-	-
	hFE	-	-	-	-	-	-
	hFE	-	-	-	-	-	-
Collector Base Voltage at IC = 10 A	VCBO	80	50	30	30	50	V
Collector Emitter Voltage at IC = 10 mA	VCEO	65	45	30	30	45	V
Emitter Base Voltage at IE = 1 A	VEBO	6	6	5	5	5	V
Collector Base Cutoff Current at VCB = 30 V	ICBO	-15					nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	-100					nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	-0.25					V
	IC = 100 mA, IB = 5 mA	VCE(sat)	-0.6					V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VBE	0.58 - 0.7					V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VCE = 5 V, IC = 10 mA	VBE	- 0.77					V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	100					MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz	Cob	-4.5					pF