NPN silicon epitaxial planar transistor CBI 2N5551U designed for high voltage amplifier applications

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Product Description

Product Overview

The 2N5551U is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose, high-voltage amplifier applications. It offers reliable performance in various electronic circuits requiring amplification at high voltages.

Product Attributes

Brand: 2N
Model: 5551U
Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-89

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings
Collector Base Voltage	VCBO	180	V	(Ta = 25 OC)
Collector Emitter Voltage	VCEO	160	V	(Ta = 25 OC)
Emitter Base Voltage	VEBO	6	V	(Ta = 25 OC)
Collector Current	IC	600	mA	(Ta = 25 OC)
Power Dissipation	Ptot	500	mW	(Ta = 25 OC)
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC
Characteristics at Ta = 25 OC
DC Current Gain	hFE	80	-	VCE = 5 V, IC = 1 mA
DC Current Gain	hFE	80	-	VCE = 5 V, IC = 10 mA
DC Current Gain	hFE	30	-	VCE = 5 V, IC = 50 mA
Collector Base Cutoff Current	ICBO	-50	nA	VCB = 120 V
Emitter Base Cutoff Current	IEBO	-50	nA	VEB = 4 V
Collector Base Breakdown Voltage	V(BR)CBO	180	V	IC = 100 A
Collector Emitter Breakdown Voltage	V(BR)CEO	160	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	0.15	V	IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.2	V	IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	1	V	IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage	VBE(sat)	1	V	IC = 50 mA, IB = 5 mA
Gain Bandwidth Product	fT	100-300	MHz	VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	6	pF	VCB = 10 V, f = 1 MHz