Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits

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Product Description

Product Overview

This product features two PNP transistors integrated into a single SOT-363 package. This dual transistor design offers advantages such as reducing component count and saving board space, with no mutual interference between the transistors. It is suitable for applications requiring PNP transistor functionality in a compact form factor.

Product Attributes

Package Type: SOT-363
Transistor Type: PNP + PNP (Dual Transistor)
Marking: 3F
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	Ic=-10A,IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	Ic=-10mA,IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-30V,IE=0		-15	nA
DC current gain	hFE	VCE=-5V,IC=-2mA	125	630
Collector-emitter saturation voltage	VCE(sat)(1)	IC=-10mA,IB=-0.5mA		-0.3	V
Collector-emitter saturation voltage	VCE(sat)(2)	IC=-100mA,IB=-5mA		-0.65	V
Base-emitter voltage	VBE(1)	VCE=-5V,IC=-2mA	-0.6	-0.75	V
Base-emitter voltage	VBE(2)	VCE=-5V,IC=-10mA		-0.82	V
Transition frequency	fT	VCE=-5V,IC=-10mA,f=100MHz	200			MHz
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz		3.5		pF
Noise figure	NF	VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz		2.5		dB

Symbol	Parameter	Value	Units
VCBO	Collector- Base Voltage	-50	V
VCEO	Collector-Emitter Voltage	-45	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current -Continuous	-0.2	A
PC	Collector Power Dissipation	0.3	W
RJA	Thermal Resistance from Junction to Ambient	417	/W
TJ	Junction Temperature	150
Tstg	Storage Temperature	-55-150