Power optimized P channel MOSFET Bruckewell MSQ30P15 suitable for LED load switches and POL modules
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Product Description
Product Overview
The MSQ30P15 is a high-performance trench P-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key applications include MB, VGA, Vcore, POL applications, load switches, and LED applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: P-Channel MOSFET
- Model: MSQ30P15
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOP-8
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID | Continuous Drain Current (TC =25°C) | -15 | A | |||
| ID | Continuous Drain Current (TC =70°C) | -12 | A | |||
| IDM | Pulsed Drain Current1,2 | -45 | A | |||
| ID | Continuous Drain Current (TA =25°C) | -9.0 | A | |||
| ID | Continuous Drain Current (TA =70°C) | -7.2 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | -46 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 105 | mJ | |||
| PD | Power Dissipation4 (TA =25°C) | 1.5 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 85 | °C/W | |||
| RθJC | Maximum Junction-to-Case1 | 30 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250µA | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250µA | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-10A | 24 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25°C | -1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =55°C | -5 | µA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-10V, ID =-12A | 12 | mΩ | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-4.5V, ID =-8A | 20 | mΩ | ||
| EAS | Single Pulse Avalanche Energy5 | VDD =-25V, L =0.1mH, IAS =-33A | 54 | mJ | ||
| VSD | Diode Forward Voltage2 | IS =-12A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current1,6 | -15 | A | |||
| ISM | Pulsed Source Current2,6 | VG =VD =0V, Force Current | -45 | A | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =-15V, ID =-10A, VGS =-4.5V | 20 | nC | ||
| Qgs | Gate-Source Charge | 5.1 | nC | |||
| Qgd | Gate-Drain Charge | 7.3 | nC | |||
| td(on) | Turn-On Delay Time2 | 33.8 | ns | |||
| tr | Rise Time | 35.8 | ns | |||
| td(off) | Turn-Off Delay Time | 72.8 | ns | |||
| tf | Fall Time | VDS =-15V, ID =-1A, VGS =-10V, RG =3.3Ω | 10.5 | ns | ||
| CISS | Input Capacitance | VDS =-15V, VGS =0V, f =1.0MHz | 2215 | pF | ||
| COSS | Output Capacitance | 310 | pF | |||
| CRSS | Reverse Transfer Capacitance | 237 | pF | |||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 9 | Ω | ||
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