SOT 23 P Channel MOSFET Bruckewell MS40P05 Suitable for MB VGA Vcore POL and Load Switch Applications
Product Overview
The MS40P05AU is a high-performance P-Channel MOSFET featuring extreme high cell density, designed to deliver excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. It is suitable for MB, VGA, Vcore, POL applications, and load switches, with AEC-Q101 qualification available.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: P-Channel MOSFET
- Model: MS40P05AU
- Package Type: SOT-23
- Certifications: RoHS Compliant, Green Device Available, AEC-Q101 qualification available (suffix-AU)
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current1 (TA =25C) | -4.6 | A | |||
| ID | Continuous Drain Current1 (TA =100C) | -2 | A | |||
| IDM | Pulsed Drain Current1,2 | -18 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | -13 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 8.4 | mJ | |||
| PD | Power Dissipation4 (TA =25C) | 2.5 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +175 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient1 | 125 | C/W | |||
| RJC | Maximum Junction-to-Case1 | 80 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250A | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250A | -40 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-3A | 5.8 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | 100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-36V, VGS =0V, TJ =25C VDS =-36V, VGS =0V, TJ =55C | -1 -10 | A | ||
| RDS (on) | Drain-Source On-Resistance2 | VGS =-10V, ID =-3A VGS =-4.5V, ID =-2A | 70 100 | m | ||
| EAS | Single Pulse Avalanche Energy5 | VDD =-25V, IAS =-3.5A | 6.1 | mJ | ||
| VSD | Diode Forward Voltage2 | IS = -1A, VGS = 0, V TJ =25C | -1.2 | V | ||
| IS | Continuous Source Current1,6 | VG =VD =0V, Force Current | -3.2 | A | ||
| ISM | Pulsed Source Current2,6 | -16 | A | |||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =-32V ID =-3A VGS =-4.5V | 6.4 | nC | ||
| Qgs | Gate-Source Charge | 2.1 | nC | |||
| Qgd | Gate-Drain Charge | 2.5 | nC | |||
| td(on) | Turn-On Delay Time2 | VDS =-20V ID =-3A VGS =-4.5V RG =3.3 | 4.2 | ns | ||
| tr | Rise Time | 23 | ns | |||
| td(off) | Turn-Off Delay Time | 26.8 | ns | |||
| tf | Fall Time | 20.6 | ns | |||
| CISS | Input Capacitance | VDS =-15V VGS =0V f =1.0MHz | 620 | pF | ||
| COSS | Output Capacitance | 65 | pF | |||
| CRSS | Reverse Transfer Capacitance | 53 | pF | |||
| Rg | Gate Resistance | VDS =0V, f =1.0MHz | 4.3 | |||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
3 The EAS data shows maximum rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-13A.
4 The power dissipation is limited by 175 junction temperature.
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
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