CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching
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Product Description
Product Overview
The MMDTC114EE is an NPN Silicon Epitaxial Planar Digital Transistor designed with built-in bias resistors. This feature simplifies circuit design by reducing the quantity of external components and streamlining the manufacturing process. It is suitable for applications requiring digital switching and signal amplification.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Digital Transistor
- Built-in Components: Bias resistors
- Design Advantage: Simplified circuit design, reduced part count, and simplified manufacturing process
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25) | |||
| Collector Emitter Voltage | VCEO | 50 | V |
| Input Voltage | VI | -10 to +40 | V |
| Collector Current | IC | 100 | mA |
| Power Dissipation | Ptot | 150 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55 to +150 | |
| Characteristics at Ta = 25 | |||
| DC Current Gain at VCE = 5 V, IC = 5 mA | hFE | 30 | - |
| Collector Base Cutoff Current at VCB = 50 V | ICBO | - | 500 nA |
| Emitter Base Cutoff Current at VEB = 5 V | IEBO | - | 0.88 mA |
| Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA | VCE(sat) | - | 0.3 V |
| Input on Voltage at VCE = 0.3 V, IC = 10 mA | VI(on) | - | 3 V |
| Input off Voltage at VCE = 5 V, IC = 100 A | VI(off) | 0.5 | - V |
| Transition frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz | fT | - | 250 MHz |
| Input Resistance | R1 | 7 to 13 | K |
| Resistance Ratio | R2 / R1 | 0.8 to 1.2 | - |
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