PNP transistor small surface mount package medium power amplification switching CBI MMBT5401W device

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This PNP plastic-encapsulated transistor is designed as a complementary component to the MMBT5551W. Featuring a small surface mount package, it is ideal for medium power amplification and switching applications. The transistor is marked with 'K4M'.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT323
Transistor Type: PNP

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-600	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance From Junction To Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-160			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0	-150			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=-120V, IE=0			-50	nA
Emitter cut-off current	IEBO	VEB=-3V, IC=0			-50	nA
DC current gain	hFE	VCE=-5V, IC=-1mA	50
		VCE=-5V, IC=-10mA	60
		VCE=-5V, IC=-50mA		300
Collector-emitter saturation voltage	VCE(sat)	IC=-10mA, IB=-1mA		-0.5		V
		IC=-50mA, IB=-5mA		-0.2		V
		IC=-50mA, IB=-5mA		-1		V
Base-emitter saturation voltage	VBE(sat)	IC=-10mA, IB=-1mA		-1		V
Transition frequency	fT	VCE=-10V,IC=-10mA , f=100MHz		100		MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz			6	pF